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半導(dǎo)體物理性能手冊-第2卷-(上冊) 版權(quán)信息
- ISBN：9787560345161
- 條形碼：9787560345161 ; 978-7-5603-4516-1
- 裝幀：一般膠版紙
- 冊數(shù)：暫無
- 重量：暫無
- 所屬分類：>>
半導(dǎo)體物理性能手冊-第2卷-(上冊) 本書特色
《springer手冊精選原版系列：半導(dǎo)體物理性能手冊（第2卷 上冊）》介紹了各族半導(dǎo)體、化合物半導(dǎo)體的物理性能，包括：結(jié)構(gòu)特性、熱學(xué)性質(zhì)、彈性性質(zhì)、聲子與晶格振動性質(zhì)、集體效應(yīng)及相關(guān)性質(zhì)、能帶結(jié)構(gòu)：能帶隙、能帶結(jié)構(gòu)：電子和空穴的有效質(zhì)量、電子形變勢、電子親和能與肖特基勢壘高度、光學(xué)性質(zhì)、彈光、電光和非線性光學(xué)性質(zhì)、載流子輸運性質(zhì)。
半導(dǎo)體物理性能手冊-第2卷-(上冊) 內(nèi)容簡介
《Springer手冊精選原版系列：半導(dǎo)體物理性能手冊（第2卷 上冊）》介紹了各族半導(dǎo)體、化合物半導(dǎo)體的物理性能，包括：結(jié)構(gòu)特性、熱學(xué)性質(zhì)、彈性性質(zhì)、聲子與晶格振動性質(zhì)、集體效應(yīng)及相關(guān)性質(zhì)、能帶結(jié)構(gòu)：能帶隙、能帶結(jié)構(gòu)：電子和空穴的有效質(zhì)量、電子形變勢、電子親和能與肖特基勢壘高度、光學(xué)性質(zhì)、彈光、電光和非線性光學(xué)性質(zhì)、載流子輸運性質(zhì)。
半導(dǎo)體物理性能手冊-第2卷-(上冊) 目錄
preface
acknowledgments
contents of other volumes
1 cubic boron nitride (c-bn)
1.1 structural properties
1.1.1 ionicity
1.1.2 elemental isotopic abundance and molecular weight
1.1.3 crystal structure and space group
1.1.4 lattice constant and its related parameters
1.1.5 structural phase transition
1.1.6 cleavage plane
1.2 thermal properties
1.2.1 melting point and its related parameters
1.2.2 specific heat
1.2.3 debye temperature
1.2.4 thermal expansion coefficient
1.2.5 thermal conductivity and diffusivity
1.3 elastic properties
1.3.1 elastic constant
1.3.2 third-order elastic constant
1.3.3 young's modulus, poisson's ratio, and similar
1.3.4 microhardness
1.3.5 sound velocity
1.4 phonons and lattice vibronic properties
1.4.1 phonon dispersion relation
1.4.2 phonon frequency
1.4.3 mode gruneisen parameter
1.4.4 phonon deformation potential
1.5 collective effects and related properties
1.5.1 piezoelectric constant
1.5.2 frohlich coupling constant
1.6 energy-band structure: energy-band gaps
1.6.1 basic properties
1.6.2 eo-gap region
1.6.3 higher-lying direct gap
1.6.4 lowest indirect gap
1.6.5 conduction-valley energy separation
1.6.6 direct-indirect-gap transition pressure
1.7 energy-band structure: electron and hole effective masses l
1.7.1 electron effective mass: f valley
1.7.2 electron effective mass: satellite valley
1.7.3 hole effective mass
1.8 'electronic deformation potential
1.8.1 intravalley deformation potential: i- point
1.8.2 intravalley deformation potential: high-symmetry points
1.8.3 intervalley deformation potential
1.9 electron affinity and schottky barrier height
1.9.1 electron affinity
1.9.2 schottky barrier height
1.10 optical properties
1.10.1 summary of optical dispersion relations
1.10.2 the reststrahlen region
1.10.3 at or near the fundamental absorption edge
1.10.4 the interband transition region
1.10.5 free-carrier absorption and related phenomena
1.11 elastooptic, electrooptic, and nonlinear optical properties
1.11.1 elastooptic effect
1.11.2 linear electrooptic constant
1.11.3 quadratic electrooptic constant
1.11.4 franz-keldysh effect
1.11.5 nonlinear optical constant
1.12 carrier transport properties
1.12.1 low-field mobility: electrons
1.12.2 low-field mobility: holes
1.12.3 high-field transport: electrons
1.12.4 high-field transport: holes
1.12.5 minority-carrier transport: electrons in p-type materials
1.12.6 minority-carrier transport: holes in n-type materials
……
2 hexagonal boron nitride (h-bn)
3 boron phosphide (bp)
4 boron arsenide (bas)
5 wurtzite aluminum nitride (w-ain)
6 cubic aluminum nitride (c-ain)
8 aluminum arsenide (aias)
9 aluminum antimonide (aisb)
acknowledgments
contents of other volumes
1 cubic boron nitride (c-bn)
1.1 structural properties
1.1.1 ionicity
1.1.2 elemental isotopic abundance and molecular weight
1.1.3 crystal structure and space group
1.1.4 lattice constant and its related parameters
1.1.5 structural phase transition
1.1.6 cleavage plane
1.2 thermal properties
1.2.1 melting point and its related parameters
1.2.2 specific heat
1.2.3 debye temperature
1.2.4 thermal expansion coefficient
1.2.5 thermal conductivity and diffusivity
1.3 elastic properties
1.3.1 elastic constant
1.3.2 third-order elastic constant
1.3.3 young's modulus, poisson's ratio, and similar
1.3.4 microhardness
1.3.5 sound velocity
1.4 phonons and lattice vibronic properties
1.4.1 phonon dispersion relation
1.4.2 phonon frequency
1.4.3 mode gruneisen parameter
1.4.4 phonon deformation potential
1.5 collective effects and related properties
1.5.1 piezoelectric constant
1.5.2 frohlich coupling constant
1.6 energy-band structure: energy-band gaps
1.6.1 basic properties
1.6.2 eo-gap region
1.6.3 higher-lying direct gap
1.6.4 lowest indirect gap
1.6.5 conduction-valley energy separation
1.6.6 direct-indirect-gap transition pressure
1.7 energy-band structure: electron and hole effective masses l
1.7.1 electron effective mass: f valley
1.7.2 electron effective mass: satellite valley
1.7.3 hole effective mass
1.8 'electronic deformation potential
1.8.1 intravalley deformation potential: i- point
1.8.2 intravalley deformation potential: high-symmetry points
1.8.3 intervalley deformation potential
1.9 electron affinity and schottky barrier height
1.9.1 electron affinity
1.9.2 schottky barrier height
1.10 optical properties
1.10.1 summary of optical dispersion relations
1.10.2 the reststrahlen region
1.10.3 at or near the fundamental absorption edge
1.10.4 the interband transition region
1.10.5 free-carrier absorption and related phenomena
1.11 elastooptic, electrooptic, and nonlinear optical properties
1.11.1 elastooptic effect
1.11.2 linear electrooptic constant
1.11.3 quadratic electrooptic constant
1.11.4 franz-keldysh effect
1.11.5 nonlinear optical constant
1.12 carrier transport properties
1.12.1 low-field mobility: electrons
1.12.2 low-field mobility: holes
1.12.3 high-field transport: electrons
1.12.4 high-field transport: holes
1.12.5 minority-carrier transport: electrons in p-type materials
1.12.6 minority-carrier transport: holes in n-type materials
……
2 hexagonal boron nitride (h-bn)
3 boron phosphide (bp)
4 boron arsenide (bas)
5 wurtzite aluminum nitride (w-ain)
6 cubic aluminum nitride (c-ain)
8 aluminum arsenide (aias)
9 aluminum antimonide (aisb)
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